Developing Future SiC Semiconductors

Wide Band-Gap Semiconductor Silicon Carbide (SiC) has superlative stability at temperatures beyond those possible with conventional silicon or silicon on insulator components. SiC devices also demonstrate superlative radiation tolerance, as well as high efficiency, low losses and fast switching in power electronic applications​. These capabilities open up new markets in the extreme environments that are common in the automotive, oil & gas, geothermal, aerospace, space and military sectors.​ The SiC devices are confined to value added, high performance applications where the added functionality is critical. The technology offers the possibility of remote monitoring in extreme environments, something that is not possible using conventional electronics and hence enabling the Internet of Everything Everywhere (IoEE).

Alton Horsfall is a leading expert in the development of electronic and electrical systems for deployment in extreme environments. He holds a BSc and PhD in Physics from Durham University, experience working for the Defence Evaluation and Research Agency in the Future Concepts team has also worked at Newcastle University, where was promoted to the post of Reader in Semiconductor Technology. He was awarded a Senior Research Fellowship from the Royal Academy of Engineering in 2017. He is currently a professor at Durham University. His work has been supported through collaborations with a range of companies, including Rolls Royce, Raytheon, BAE Systems and MBDA, as well as a range of SMEs. He founded Nascent Semiconductor to provide a commercialisation route to his twenty year portfolio of semiconductor know-how and technology.

17:30-18:00 - Tea and Coffee

18:00-18:50 - In-person only Lecture Starts

18:50 to 19:00 - Q & A

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Host or Publisher North of England Institute of Mining and Mechanical Engineers